(preprint)Characterization of the Chemical and Electrical Properties of Defects at the Niobium-Silicon Interface.
Published in arXiv, 2020
Recommended citation: (preprint) Low microwave loss in deposited Si and Ge thin-film dielectrics at near single-photon power and low temperatures. C. Kopas, J. Gonzales, S. Zhang, D. Queen, B. Wagner, N. Newman. (2020) https://arxiv.org/abs/2011.08359 https://arxiv.org/abs/2011.08359
This manuscript investigates the defects at niobium-silicon interfaces to try to understand physical sources of microwave loss, then optimizes surface trreatments to minimize defect concentrations. The manuscript is complete, but awaiting submission for peer review.
Recommended citation: (Manuscript in progress) Characterization of the Chemical and Electrical Properties of defects at the Niobium-Silicon Interface. C. Kopas, M. Murthy, C. Gregory, J. Gonzales, D. Queen, B. Wagner, N. Newman. (2020) https://arxiv.org/abs/2011.08359